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Nguyen Van Dung

Major:High-k high entropy oxide for advanced gate stack, Metal-oxide-semiconductor field effect transistors (MOSFETs) and Thin film transistors (TFTs)

Publication:

1.V.D. Nguyen, T. Nagata, H.D. Luong. K.S. Chang, Electrical and UV-sensing performance of N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3-dielectric and ZnSnO-channel-based flexible thin-film transistors, Appl. Surf. Sci. 681 (2025) 161568.

2.Y.C. Wang, V.D. Nguyen, K.S. Chang, Spin coating high-k multicomponent (Al,Ti,V,Zr,Hf)Ox films with sub-nm EOT for MOS-based electronic devices, J. Am. Ceram. Soc. 107 (2024) 6204–6214.

3.V.D. Nguyen, T. Nagata, K.S. Chang, High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba(Ti,Zr,Ta,Hf,Mo)O3 film-based metal-oxide-semiconductor-related device, Mater. Today Phys. 37 (2023) 101202.

4.Van Dung Nguyen, Takahiro Nagata, and K.-S. Chang*, “High-Throughput Methodology for The Realization of High-Entropy Sub-nm Equivalent-Oxide-Thickness High-Dielectric-Constant Ba(Ti,Zr,Ta,Hf,Mo)O3 Film-Based Metal-Oxide-Semiconductor-Related Devices,” Materials Today Physics 37, 101202 (2023).

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